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MOSFETs SIRA60DP-T1-GE3
Vishay
SIRA60DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.89 |
| Package Height | 1.07(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Process Technology | TrenchFET Gen IV |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 20|10 |
| Typical Rise Time (ns) | 20|45 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 1.7 |
| Minimum Gate Resistance (Ohm) | 0.2 |
| Maximum Power Dissipation (mW) | 5000 |
| Typical Gate Charge @ 10V (nC) | 83 |
| Typical Gate Charge @ Vgs (nC) | 83@10V|38@4.5V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 40|15 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.8 |
| Typical Turn-Off Delay Time (ns) | 40|50 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Reverse Recovery Time (ns) | 63 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 100 |
| Typical Input Capacitance @ Vds (pF) | 7650@15V |
| Maximum Drain Source Resistance (mOhm) | 0.94@10V |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 5 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 56 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 65 |
| Description |
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