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SIRA88DP-T1-GE3
SIRA88DP-T1-GE3
MOSFETs SIRA88DP-T1-GE3
Vishay
SIRA88DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Typical Fall Time (ns)8|18
Typical Rise Time (ns)28|47
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)16.8
Typical Gate Charge @ Vgs (nC)16.8@10V|8.3@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)11|7
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)14|18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)45.5
Typical Input Capacitance @ Vds (pF)985@15V
Maximum Drain Source Resistance (mOhm)6.7@10V
Description
Trans MOSFET N-CH 30V 45.5A 8-Pin PowerPAK SO EP T/R
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