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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIRC06DP-T1-GE3
SIRC06DP-T1-GE3
MOSFETs SIRC06DP-T1-GE3
Vishay
SIRC06DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIRC06DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Maximum IDSS (uA)100
Typical Fall Time (ns)8|9
Typical Rise Time (ns)14|50
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)38.5
Typical Gate Charge @ Vgs (nC)38.5@10V|17.5@4.5V
Maximum Gate Source Voltage (V)20|-16
Typical Turn-On Delay Time (ns)12|29
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)20|23
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)32
Typical Input Capacitance @ Vds (pF)2455@15V
Maximum Drain Source Resistance (mOhm)2.7@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO EP T/R
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