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SIS415DNT-T1-GE3
SIS415DNT-T1-GE3
MOSFETs SIS415DNT-T1-GE3
Vishay
SIS415DNT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeFlat
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height0.75(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212-T
Maximum IDSS (uA)1
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25|14
Typical Rise Time (ns)38|13
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)4
Minimum Gate Resistance (Ohm)0.4
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ 10V (nC)117
Typical Gate Charge @ Vgs (nC)117@10V|55.5@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)645
Typical Turn-On Delay Time (ns)37|14
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.4
Typical Turn-Off Delay Time (ns)82|83
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.72
Typical Gate to Drain Charge (nC)12.7
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.4
Typical Gate to Source Charge (nC)7.9
Typical Reverse Recovery Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22.6
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)5460@10V
Typical Reverse Recovery Charge (nC)12
Maximum Drain Source Resistance (MOhm)4@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)80
Maximum Power Dissipation on PCB @ TC=25°C (W)3.7
Typical Reverse Transfer Capacitance @ Vds (pF)642@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)22.6
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)81
Description
Trans MOSFET P-CH 20V 22.6A 8-Pin PowerPAK 1212-T T/R
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