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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SISA12DN-T1-GE3
SISA12DN-T1-GE3
MOSFETs SISA12DN-T1-GE3
Vishay
SISA12DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SISA12DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212 EP
Process TechnologyTrenchFET
Standard Package NamePowerPAK 1212
Typical Fall Time (ns)10
Typical Rise Time (ns)10|15
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ 10V (nC)29.5
Typical Gate Charge @ Vgs (nC)29.5@10V|13.6@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)10|20
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22|25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22
Typical Input Capacitance @ Vds (pF)2070@15V
Maximum Drain Source Resistance (mOhm)4.3@10V
Description
Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK 1212 EP T/R
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