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SISF20DN-T1-GE3
SISF20DN-T1-GE3
MOSFETs SISF20DN-T1-GE3
Vishay
SISF20DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Drain
Package Width3.3
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212-SCD
Typical Fall Time (ns)7
Typical Rise Time (ns)50
Number of Elements per Chip2
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)22
Typical Gate Charge @ Vgs (nC)10.2@4.5V|22@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)1290@30V
Maximum Drain Source Resistance (mOhm)13@10V
Description
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R
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