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MOSFETs SISS80DN-T1-GE3
Vishay
SISS80DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.3 |
| Package Height | 0.78(Max) |
| Package Length | 3.3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212-S EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET Gen IV |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 42 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 5000 |
| Typical Gate Charge @ 10V (nC) | 81 |
| Typical Gate Charge @ Vgs (nC) | 81@10V|36@4.5V |
| Maximum Gate Source Voltage (V) | 12 |
| Typical Turn-On Delay Time (ns) | 25 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 58.3 |
| Typical Input Capacitance @ Vds (pF) | 6450@10V |
| Maximum Drain Source Resistance (MOhm) | 0.92@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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