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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIZ700DT-T1-GE3
SIZ700DT-T1-GE3
MOSFETs SIZ700DT-T1-GE3
Vishay
SIZ700DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIZ700DT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3.73
Package Height0.55
Package Length6
Product CategoryPower MOSFET
Supplier PackagePowerPAIR
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)8@Channel 1|15|10@Channel 2
Typical Rise Time (ns)8|9@Channel 1|8@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)1400@Channel 1|1470@Channel 2
Typical Gate Charge @ 10V (nC)20@Channel 1|55@Channel 2
Typical Gate Charge @ Vgs (nC)20@10V|9.5@4.5V@Channel 1|55@10V|27@4.5V@Channel 2
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)9|8@Channel 1|13|12@Channel 2
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)25@Channel 1|52|47@Channel 2
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13.1@Channel 1|17.3@Channel 2
Typical Input Capacitance @ Vds (pF)1300@10V@Channel 1|3860@10V@Channel 2
Maximum Drain Source Resistance (mOhm)8.6@10V@Channel 1|5.8@10V@Channel 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 20V 13.1A/17.3A 6-Pin PowerPAIR T/R
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