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MOSFETs SIZ700DT-T1-GE3
Vishay
SIZ700DT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 3.73 |
| Package Height | 0.55 |
| Package Length | 6 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 8@Channel 1|15|10@Channel 2 |
| Typical Rise Time (ns) | 8|9@Channel 1|8@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1400@Channel 1|1470@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 20@Channel 1|55@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 20@10V|9.5@4.5V@Channel 1|55@10V|27@4.5V@Channel 2 |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 9|8@Channel 1|13|12@Channel 2 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 25@Channel 1|52|47@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13.1@Channel 1|17.3@Channel 2 |
| Typical Input Capacitance @ Vds (pF) | 1300@10V@Channel 1|3860@10V@Channel 2 |
| Maximum Drain Source Resistance (mOhm) | 8.6@10V@Channel 1|5.8@10V@Channel 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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