PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 6 |
Package Height | 0.7(Max) |
Package Length | 5 |
Product Category | Power MOSFET |
Supplier Package | PowerPAIR EP |
Maximum IDSS (uA) | 200@Channel 2|1@Channel 1 |
Process Technology | TrenchFET Gen IV |
Typical Fall Time (ns) | 12|10@Channel 1|18|10@Channel 2 |
Typical Rise Time (ns) | 100|20@Channel 1|120|10@Channel 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 3800@Channel 1|4800@Channel 2 |
Typical Gate Charge @ 10V (nC) | 12@Channel 1|31.1@Channel 2 |
Typical Gate Charge @ Vgs (nC) | 12@10V|5.7@4.5V@Channel 1|31.1@10V|14.6@4.5V@Channel 2 |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 20|10@Channel 1|30|15@Channel 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 15|20@Channel 1|40|30@Channel 2 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 23.7@Channel 1|36.2@Channel 2 |
Typical Input Capacitance @ Vds (pF) | 790@15V@Channel 1|2130@15V@Channel 2 |
Maximum Drain Source Resistance (mOhm) | 4.39@10V@Channel 1|2.4@10V@Channel 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description | |