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SIZ998BDT
SIZ998BDT
MOSFETs SIZ998BDT
Vishay
SIZ998BDT
--
Diodes, Transistors and Thyristors
MOSFETs
SIZ998BDT.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height0.7(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePowerPAIR EP
Maximum IDSS (uA)200@Channel 2|1@Channel 1
Process TechnologyTrenchFET Gen IV
Typical Fall Time (ns)12|10@Channel 1|18|10@Channel 2
Typical Rise Time (ns)100|20@Channel 1|120|10@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)3800@Channel 1|4800@Channel 2
Typical Gate Charge @ 10V (nC)12@Channel 1|31.1@Channel 2
Typical Gate Charge @ Vgs (nC)12@10V|5.7@4.5V@Channel 1|31.1@10V|14.6@4.5V@Channel 2
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)20|10@Channel 1|30|15@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)15|20@Channel 1|40|30@Channel 2
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)23.7@Channel 1|36.2@Channel 2
Typical Input Capacitance @ Vds (pF)790@15V@Channel 1|2130@15V@Channel 2
Maximum Drain Source Resistance (mOhm)4.39@10V@Channel 1|2.4@10V@Channel 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R
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