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SPB35N10
SPB35N10
MOSFETs SPB35N10
Infineon
SPB35N10
--
Diodes, Transistors and Thyristors
MOSFETs
SPB35N10.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologySIPMOS
Standard Package NameTO-263
Typical Fall Time (ns)23
Typical Rise Time (ns)63
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)49
Typical Gate Charge @ Vgs (nC)49@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12.2
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)39
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Typical Input Capacitance @ Vds (pF)1180@25V
Maximum Drain Source Resistance (MOhm)44@10V
Description
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK
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