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SPD02N80C3
SPD02N80C3
MOSFETs SPD02N80C3
Infineon
SPD02N80C3
--
Diodes, Transistors and Thyristors
MOSFETs
SPD02N80C3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyCoolMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)18
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)42000
Typical Gate Charge @ 10V (nC)9
Typical Gate Charge @ Vgs (nC)9@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)65
Maximum Diode Forward Voltage (V)1.2
Maximum Gate Threshold Voltage (V)3.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)290@25V
Maximum Drain Source Resistance (mOhm)2700@10V
Maximum Positive Gate Source Voltage (V)20
Description
Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
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