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SPD08P06P
SPD08P06P
MOSFETs SPD08P06P
Infineon
SPD08P06P
--
Diodes, Transistors and Thyristors
MOSFETs
SPD08P06P.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologySIPMOS
Standard Package NameTO-252
Typical Fall Time (ns)14
Typical Rise Time (ns)46
Number of Elements per Chip1
Maximum Power Dissipation (mW)42000
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)10@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)48
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.83
Typical Input Capacitance @ Vds (pF)335@25V
Maximum Drain Source Resistance (mOhm)300@6.2V
Description
Trans MOSFET P-CH 60V 8.83A 3-Pin(2+Tab) DPAK
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