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MOSFETs SPP15P10PGHKSA1
Infineon
SPP15P10PGHKSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 4.57(Max) |
| Package Height | 9.45(Max) |
| Package Length | 10.36(Max) |
| Product Category | Small Signal |
| Supplier Package | TO-220 |
| Process Technology | SIPMOS |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 23 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 128000 |
| Typical Gate Charge @ 10V (nC) | 37 |
| Typical Gate Charge @ Vgs (nC) | 37@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 237 |
| Typical Turn-On Delay Time (ns) | 9.5 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Typical Gate to Drain Charge (nC) | 18 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Typical Gate to Source Charge (nC) | 5.4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 15 |
| Typical Input Capacitance @ Vds (pF) | 961@25V |
| Typical Reverse Recovery Charge (nC) | 419 |
| Maximum Drain Source Resistance (MOhm) | 240@10V |
| Description |
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