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MOSFETs SQ2389ES-T1_BE3
Vishay
SQ2389ES-T1_BE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| ECCN (US) | EAR99 |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 12 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Gate Charge @ Vgs (nC) | 8.2@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.1 |
| Typical Input Capacitance @ Vds (pF) | 360@15V |
| Maximum Drain Source Resistance (MOhm) | 94@10V |
| Description |
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