Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | Unknown |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | Yes |
Lead Shape | Gull-wing |
PCB changed | 8 |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.55(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 19@N Channel|16@P Channel |
Typical Rise Time (ns) | 17 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 3300 |
Typical Gate Charge @ 10V (nC) | 5.9@N Channel|7.9@P Channel |
Typical Gate Charge @ Vgs (nC) | 5.9@10V@N Channel|7.9@10V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 7@N Channel|6@P Channel |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 10@N Channel|19@P Channel |
Maximum Gate Threshold Voltage (V) | 2.5 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 7.3@N Channel|5.3@P Channel |
Typical Input Capacitance @ Vds (pF) | 357@15V@N Channel|352@15V@P Channel |
Maximum Drain Source Resistance (mOhm) | 31@10V@N Channel|70@10V@P Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |