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SQ4532AEY-T1_BE3
SQ4532AEY-T1_BE3
MOSFETs SQ4532AEY-T1_BE3
Vishay
SQ4532AEY-T1_BE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)19@N Channel|16@P Channel
Typical Rise Time (ns)17
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)5.9@N Channel|7.9@P Channel
Typical Gate Charge @ Vgs (nC)5.9@10V@N Channel|7.9@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7@N Channel|6@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)10@N Channel|19@P Channel
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.3@N Channel|5.3@P Channel
Typical Input Capacitance @ Vds (pF)357@15V@N Channel|352@15V@P Channel
Maximum Drain Source Resistance (mOhm)31@10V@N Channel|70@10V@P Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 30V 7.3A/5.3A Automotive 8-Pin SOIC N T/R
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