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SQ4936EY-T1-GE3
SQ4936EY-T1-GE3
MOSFETs SQ4936EY-T1-GE3
Vishay
SQ4936EY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)7
Typical Rise Time (ns)11
Number of Elements per Chip2
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)18
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)664@25V
Maximum Drain Source Resistance (mOhm)36@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 7A Automotive 8-Pin SOIC N T/R
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