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SQD45P03-12-GE3
SQD45P03-12-GE3
MOSFETs SQD45P03-12-GE3
Vishay
SQD45P03-12-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameTO-252
Typical Fall Time (ns)19
Typical Rise Time (ns)11
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)71000
Typical Gate Charge @ 10V (nC)55.3
Typical Gate Charge @ Vgs (nC)55.3@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)29
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)2794@15V
Maximum Drain Source Resistance (MOhm)10@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R
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