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BSC160N15NS5
BSC160N15NS5
MOSFETs BSC160N15NS5
Infineon
BSC160N15NS5
--
Diodes, Transistors and Thyristors
MOSFETs
BSC160N15NS5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS™5
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.6
Typical Rise Time (ns)3
Number of Elements per Chip1
Maximum Power Dissipation (mW)96000
Typical Gate Charge @ 10V (nC)19
Typical Gate Charge @ Vgs (nC)19@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)9.6
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)10.8
Maximum Gate Threshold Voltage (V)4.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)56
Typical Input Capacitance @ Vds (pF)1370@75V
Maximum Drain Source Resistance (MOhm)16@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 150V 56A T/R
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