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SQJ500AEP-T1_GE3
SQJ500AEP-T1_GE3
MOSFETs SQJ500AEP-T1_GE3
Vishay
SQJ500AEP-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveYes
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width4.37
Package Height1.07
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)10@N Channel|19@P Channel
Typical Rise Time (ns)12@N Channel|9@P Channel
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)48000
Typical Gate Charge @ 10V (nC)25.5@N Channel|30.2@P Channel
Typical Gate Charge @ Vgs (nC)25.5@10V@N Channel|30.2@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8@N Channel|7@P Channel
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)22@N Channel|43@P Channel
Maximum Gate Threshold Voltage (V)2.5@P Channel|2.3@N Channel
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)1474@20V@N Channel|1302@20V@P Channel
Maximum Drain Source Resistance (mOhm)9.2@10V@N Channel|27@10V@P Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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