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SQJ872EP-T1_GE3
SQJ872EP-T1_GE3
MOSFETs SQJ872EP-T1_GE3
Vishay
SQJ872EP-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveYes
Lead ShapeGull-wing
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4.37
Package Height1.07
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Typical Fall Time (ns)8
Typical Rise Time (ns)4
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)55000
Typical Gate Charge @ 10V (nC)14
Typical Gate Charge @ Vgs (nC)14@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)504
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)19
Maximum Diode Forward Voltage (V)1.2
Maximum Gate Threshold Voltage (V)3.5
Minimum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)24.5
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)746@25V
Maximum Drain Source Resistance (MOhm)35.5@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)90
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)70
Description
Trans MOSFET N-CH 150V 24.5A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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