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SQJ941EP-T1_GE3
SQJ941EP-T1_GE3
MOSFETs SQJ941EP-T1_GE3
Vishay
SQJ941EP-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)26
Typical Rise Time (ns)35
Number of Elements per Chip2
Maximum Power Dissipation (mW)55000
Typical Gate Charge @ 10V (nC)35
Typical Gate Charge @ Vgs (nC)35@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)49
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)47
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)1500@10V
Maximum Drain Source Resistance (mOhm)24@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 30V 8A Automotive 8-Pin PowerPAK SO T/R
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