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SQS462EN-T1_GE3
SQS462EN-T1_GE3
MOSFETs SQS462EN-T1_GE3
Vishay
SQS462EN-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212 EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)8
Typical Rise Time (ns)9
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)33000
Typical Gate Charge @ 10V (nC)8
Typical Gate Charge @ Vgs (nC)8@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)12
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)374@25V
Maximum Drain Source Resistance (MOhm)63@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 8A Automotive 8-Pin PowerPAK 1212 EP T/R
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