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MOSFETs SQS966ENW-T1_GE3
Vishay
SQS966ENW-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 3.05 |
| Package Height | 1.07(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212-W EP |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 4.8 |
| Typical Rise Time (ns) | 1.7 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 27800 |
| Typical Gate Charge @ 10V (nC) | 62 |
| Typical Gate Charge @ Vgs (nC) | 62@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7.9 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Typical Input Capacitance @ Vds (pF) | 440@25V |
| Maximum Drain Source Resistance (MOhm) | 36@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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