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STB13NK60ZT4
STB13NK60ZT4
MOSFETs STB13NK60ZT4
STMicroelectronics
STB13NK60ZT4
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Diodes, Transistors and Thyristors
MOSFETs
STB13NK60ZT4.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologySuperMESH
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)66
Typical Gate Charge @ Vgs (nC)66@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)210
Typical Turn-On Delay Time (ns)22
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)5.9
Typical Turn-Off Delay Time (ns)61
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)33@10V
Maximum Gate Threshold Voltage (V)4.5
Minimum Gate Threshold Voltage (V)3
Typical Gate Threshold Voltage (V)3.75
Typical Gate to Source Charge (nC)11
Typical Reverse Recovery Time (ns)570
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2030@25V
Typical Reverse Recovery Charge (nC)4500
Maximum Drain Source Resistance (mOhm)550@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)52
Typical Reverse Transfer Capacitance @ Vds (pF)48@25V
Description
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R
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