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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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STB33N60DM2
STB33N60DM2
MOSFETs STB33N60DM2
STMicroelectronics
STB33N60DM2
--
Diodes, Transistors and Thyristors
MOSFETs
STB33N60DM2.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1.5
Process TechnologyMDmesh
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)190000
Typical Gate Charge @ 10V (nC)47
Typical Gate Charge @ Vgs (nC)47@10V
Maximum Gate Source Voltage (V)±25
Maximum Drain Source Voltage (V)600
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)24
Maximum Drain Source Resistance (MOhm)130@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 600V 24A 3-Pin(2+Tab) D2PAK T/R
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