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STB80NE03L-06
STB80NE03L-06
MOSFETs STB80NE03L-06
STMicroelectronics
STB80NE03L-06
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)165
Typical Rise Time (ns)260
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ Vgs (nC)95@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)40
Maximum Drain Source Voltage (V)30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)6500@25V
Maximum Drain Source Resistance (mOhm)6@10V
Description
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK
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