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STD9N80K5
STD9N80K5
MOSFETs STD9N80K5
STMicroelectronics
STD9N80K5
--
Diodes, Transistors and Thyristors
MOSFETs
STD9N80K5.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyMdmesh K5
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)13.6
Typical Rise Time (ns)5.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ 10V (nC)12
Typical Gate Charge @ Vgs (nC)12@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)65.3
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)340@100V
Maximum Drain Source Resistance (mOhm)900@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) DPAK T/R
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