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MOSFETs STH140N6F7-2
STMicroelectronics
STH140N6F7-2
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 8.9(Max) |
| Package Height | 4.8(Max) |
| Package Length | 10.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | H2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | STripFET VII |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 158000 |
| Typical Gate Charge @ 10V (nC) | 40 |
| Typical Gate Charge @ Vgs (nC) | 40@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 80 |
| Typical Input Capacitance @ Vds (pF) | 2700@25V |
| Maximum Drain Source Resistance (mOhm) | 3.2@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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