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STH150N10F7-2
STH150N10F7-2
MOSFETs STH150N10F7-2
STMicroelectronics
STH150N10F7-2
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.17(Max)
Package Height4.8(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)92
Typical Gate Charge @ Vgs (nC)92@10V
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)100
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)110
Typical Input Capacitance @ Vds (pF)8115@50V
Maximum Drain Source Resistance (MOhm)3.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) H2PAK T/R
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