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STH180N10F3-6
STH180N10F3-6
MOSFETs STH180N10F3-6
STMicroelectronics
STH180N10F3-6
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Height4.8(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Process TechnologyStripFET III
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6.9
Typical Rise Time (ns)97.1
Number of Elements per Chip1
Maximum Power Dissipation (mW)315000
Typical Gate Charge @ 10V (nC)114.6
Typical Gate Charge @ Vgs (nC)114.6@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25.6
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)99.9
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)6665@25V
Maximum Drain Source Resistance (MOhm)4.5@10V
Description
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R
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