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STH245N75F3-6
STH245N75F3-6
MOSFETs STH245N75F3-6
STMicroelectronics
STH245N75F3-6
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width8.9(Max)
Package Height4.8(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Maximum IDSS (uA)10
Process TechnologyStripFET III
Standard Package NameH2PAK
Typical Fall Time (ns)15
Typical Rise Time (ns)70
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)87
Typical Gate Charge @ Vgs (nC)87@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)100
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)6800@25V
Maximum Drain Source Resistance (mOhm)3@10V
Maximum Gate Source Leakage Current (nA)200
Description
Trans MOSFET N-CH 75V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
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