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STP45N60DM2AG
STP45N60DM2AG
MOSFETs STP45N60DM2AG
STMicroelectronics
STP45N60DM2AG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height9.15(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
Process TechnologyMDmesh DM2
Standard Package NameTO-220
Typical Fall Time (ns)6
Typical Rise Time (ns)27
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)56
Typical Gate Charge @ Vgs (nC)56@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)29
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)85
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)34
Typical Input Capacitance @ Vds (pF)2500@100V
Maximum Drain Source Resistance (mOhm)93@10V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-220AB Tube
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