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STP4NA80
STP4NA80
MOSFETs STP4NA80
STMicroelectronics
STP4NA80
--
Diodes, Transistors and Thyristors
MOSFETs
STP4NA80.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height9.15(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
Typical Rise Time (ns)70
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ 10V (nC)44
Typical Gate Charge @ Vgs (nC)44@10V
Maximum Gate Source Voltage (V)±30
Maximum Drain Source Voltage (V)800
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)4
Operating Junction Temperature (°C)150
Typical Input Capacitance @ Vds (pF)955@25V
Maximum Drain Source Resistance (MOhm)3000@10V
Description
Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220AB
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