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MOSFETs STP4NA80FI
STMicroelectronics
STP4NA80FI
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.6 |
| Package Height | 9.3 |
| Package Length | 10.4 |
| Product Category | Power MOSFET |
| Supplier Package | ISOWATT220 |
| Typical Rise Time (ns) | 70 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 110000 |
| Typical Gate Charge @ 10V (nC) | 44 |
| Typical Gate Charge @ Vgs (nC) | 44@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 2.5 |
| Typical Input Capacitance @ Vds (pF) | 955@25V |
| Maximum Drain Source Resistance (MOhm) | 3000@10V |
| Description |
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