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STU150N3LLH6
STU150N3LLH6
MOSFETs STU150N3LLH6
STMicroelectronics
STU150N3LLH6
--
Diodes, Transistors and Thyristors
MOSFETs
STU150N3LLH6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.4(Max)
Package Height6.2(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)46
Typical Rise Time (ns)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ Vgs (nC)40@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)740
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.8
Typical Turn-Off Delay Time (ns)75
Maximum Diode Forward Voltage (V)1.1
Typical Gate to Drain Charge (nC)15.8
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)16.3
Typical Reverse Recovery Time (ns)34
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Operating Junction Temperature (°C)175
Typical Input Capacitance @ Vds (pF)4040@25V
Typical Reverse Recovery Charge (nC)35
Maximum Drain Source Resistance (mOhm)3.3@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)320
Typical Reverse Transfer Capacitance @ Vds (pF)425@25V
Description
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) IPAK Tube
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