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SUB85N10-10
SUB85N10-10
MOSFETs SUB85N10-10
Vishay
SUB85N10-10
--
Diodes, Transistors and Thyristors
MOSFETs
SUB85N10-10.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyTrenchFET
Standard Package NameTO-263
Typical Fall Time (ns)130
Typical Rise Time (ns)90
Number of Elements per Chip1
Maximum Power Dissipation (mW)3750
Typical Gate Charge @ 10V (nC)105
Typical Gate Charge @ Vgs (nC)105@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)55
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)85
Typical Input Capacitance @ Vds (pF)6550@25V
Maximum Drain Source Resistance (mOhm)10.5@10V
Description
Trans MOSFET N-CH 100V 85A 3-Pin(2+Tab) D2PAK
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