Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.65(Max) |
Package Height | 9.01(Max) |
Package Length | 10.51(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Typical Fall Time (ns) | 8 |
Typical Rise Time (ns) | 114 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 375000 |
Typical Gate Charge @ 10V (nC) | 63 |
Typical Gate Charge @ Vgs (nC) | 63@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 15 |
Maximum Drain Source Voltage (V) | 150 |
Typical Turn-Off Delay Time (ns) | 28 |
Maximum Gate Threshold Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 128 |
Typical Input Capacitance @ Vds (pF) | 3425@75V |
Maximum Drain Source Resistance (mOhm) | 9.4@10V |
Maximum Gate Source Leakage Current (nA) | 250 |
Description |