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SUP80090E-GE3
SUP80090E-GE3
MOSFETs SUP80090E-GE3
Vishay
SUP80090E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.65(Max)
Package Height9.01(Max)
Package Length10.51(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)8
Typical Rise Time (ns)114
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)63
Typical Gate Charge @ Vgs (nC)63@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)28
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)128
Typical Input Capacitance @ Vds (pF)3425@75V
Maximum Drain Source Resistance (mOhm)9.4@10V
Maximum Gate Source Leakage Current (nA)250
Description
Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB
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