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TPS1100D
TPS1100D
MOSFETs TPS1100D
Texas Instruments
TPS1100D
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.98(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategorySmall Signal
Supplier PackageSOIC
Standard Package NameSOP
Typical Fall Time (ns)2
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)791
Typical Gate Charge @ 10V (nC)5.45
Typical Gate Charge @ Vgs (nC)5.45@10V
Maximum Gate Source Voltage (V)2
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)15
Typical Turn-Off Delay Time (ns)13
Typical Gate to Drain Charge (nC)1.4
Maximum Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)0.87
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)1.6
Maximum Drain Source Resistance (MOhm)400@4.5V
Description
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
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