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MOSFETs TPS1101PWR
Texas Instruments
TPS1101PWR
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 16 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 16 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Hex Drain Quint Source |
| Package Width | 4.5(Max) |
| Package Height | 1.05(Max) |
| Package Length | 5.1(Max) |
| Product Category | Small Signal |
| Supplier Package | TSSOP |
| Process Technology | LinBiCMOS |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 5.5 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 710 |
| Typical Gate Charge @ 10V (nC) | 11.25 |
| Typical Gate Charge @ Vgs (nC) | 11.25@10V |
| Maximum Gate Source Voltage (V) | 2 |
| Typical Turn-On Delay Time (ns) | 6.5 |
| Maximum Drain Source Voltage (V) | 15 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Gate to Drain Charge (nC) | 2.6 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Typical Gate to Source Charge (nC) | 1.5 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 2.18 |
| Maximum Drain Source Resistance (mOhm) | 90(Typ)@10V |
| Description |
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