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VEC2616-TL-W
VEC2616-TL-W
MOSFETs VEC2616-TL-W
onsemi
VEC2616-TL-W
--
Diodes, Transistors and Thyristors
MOSFETs
VEC2616-TL-W.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width2.3
Package Height0.78(Max)
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-28FL
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)22@N Channel|36@P Channel
Typical Rise Time (ns)7.5@N Channel|9.8@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ 10V (nC)11@P Channel|10@N Channel
Typical Gate Charge @ Vgs (nC)10@10V@N Channel|11@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.4@P Channel|7.3@N Channel
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)41@N Channel|65@P Channel
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3@N Channel|2.5@P Channel
Typical Input Capacitance @ Vds (pF)420@20V@P Channel|505@20V@N Channel
Maximum Drain Source Resistance (mOhm)137@10V@P Channel|80@10V@N Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH Si 60V 3A/2.5A 8-Pin SOT-28FL T/R
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