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VN10LPSTZ
VN10LPSTZ
MOSFETs VN10LPSTZ
Diodes Incorporated
VN10LPSTZ
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Diodes, Transistors and Thyristors
MOSFETs
VN10LPSTZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategorySmall Signal
Supplier PackageE-Line
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-92
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)60
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.27
Typical Input Capacitance @ Vds (pF)60(Max)@25V
Maximum Drain Source Resistance (MOhm)5000@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line Ammo
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