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MOSFETs VS-19MT050XFAPBF
Vishay
VS-19MT050XFAPBF
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Quad |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 50 |
| Typical Fall Time (ns) | 76 |
| Typical Rise Time (ns) | 165 |
| Number of Elements per Chip | 4 |
| Maximum Power Dissipation (mW) | 1140000 |
| Typical Gate Charge @ 10V (nC) | 105 |
| Typical Gate Charge @ Vgs (nC) | 105@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 49 |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 80 |
| Maximum Gate Threshold Voltage (V) | 6 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 31 |
| Typical Input Capacitance @ Vds (pF) | 4808@25V |
| Maximum Drain Source Resistance (mOhm) | 250@10V |
| Maximum Gate Source Leakage Current (nA) | 150 |
| Description |
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