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ZXM61N02FTA
ZXM61N02FTA
MOSFETs ZXM61N02FTA
Diodes Incorporated
ZXM61N02FTA
--
Diodes, Transistors and Thyristors
MOSFETs
ZXM61N02FTA.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.98
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)4.2
Typical Rise Time (ns)4.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)806
Typical Gate Charge @ Vgs (nC)3.4(Max)@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)50
Typical Turn-On Delay Time (ns)2.4
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.55
Typical Turn-Off Delay Time (ns)7.8
Maximum Diode Forward Voltage (V)0.95
Typical Gate to Drain Charge (nC)0.8(Max)
Maximum Gate Threshold Voltage (V)0.7(Min)
Minimum Gate Threshold Voltage (V)0.7
Typical Gate Threshold Voltage (V)2.7|4.5
Typical Gate to Source Charge (nC)0.41(Max)
Typical Reverse Recovery Time (ns)12.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)160@15V
Typical Reverse Recovery Charge (nC)5.2
Maximum Drain Source Resistance (mOhm)180@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)7.4
Maximum Power Dissipation on PCB @ TC=25°C (W)0.806
Typical Reverse Transfer Capacitance @ Vds (pF)30@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)1.7
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)200
Description
Trans MOSFET N-CH 20V 1.7A 3-Pin SOT-23 T/R
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