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MOSFETs ZXMC6A09DN8TA
Diodes Incorporated
ZXMC6A09DN8TA
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 3.95(Max) |
| Package Height | 1.5(Max) |
| Package Length | 4.95(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Process Technology | TMOS |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 11@N Channel|23@P Channel |
| Typical Rise Time (ns) | 5.8@P Channel|3.3@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2100 |
| Typical Gate Charge @ 10V (nC) | 24.2@N Channel|44@P Channel |
| Typical Gate Charge @ Vgs (nC) | 12.4@5V|24.2@10V@N Channel|23@5V|44@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 4.9@N Channel|4.6@P Channel |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 28.5@N Channel|55@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.9@N Channel|3.7@P Channel |
| Typical Input Capacitance @ Vds (pF) | 1407@40V@N Channel|1580@30V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 45@10V@N Channel|55@10V@P Channel |
| Description |
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