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Memory Modules M470T2864EH3-CE600
Samsung Electronics
M470T2864EH3-CE600
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Memory
Memory Modules
Specification
| Product Attribute | Attribute Value |
| PLL | No |
| PPAP | No |
| Module | DRAM Module |
| EU RoHS | Compliant |
| Mounting | Socket |
| ECCN (US) | 4A994.a |
| Pin Count | 200 |
| Automotive | No |
| Lead Shape | No Lead |
| CAS Latency | 5 |
| ECC Support | No |
| Module Type | 200SODIMM |
| PCB changed | 200 |
| Part Status | Obsolete |
| Subcategory | DDR2 SDRAM |
| Module Sides | Double |
| Organization | 128Mx64 |
| Self Refresh | Yes |
| Package Width | 3.8(Max) |
| Module Density | 1Gbyte |
| Package Height | 30 |
| Package Length | 67.6 |
| Number of Ranks | Dual |
| Supplier Package | USODIMM |
| Chip Package Type | FBGA |
| Chip Configuration | 64Mx16 |
| Chip Density (bit) | 1G |
| SPD EEPROM Support | Yes |
| Data Bus Width (bit) | 64 |
| Number of Chip Banks | 8 |
| Max. Access Time (ns) | 0.45 |
| Operating Current (mA) | 428 |
| Maximum Clock Rate (MHz) | 667 |
| Number of Chip per Module | 8 |
| Supplier Temperature Grade | Commercial |
| Maximum Operating Temperature (°C) | 95 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Supply Voltage (V) | 1.9 |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Description |
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