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BPV11F
BPV11F
Phototransistors BPV11F
Vishay
BPV11F
--
Optoelectronics
Phototransistors
BPV11F.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
Diameter5.75
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
Cut-Off FilterVisible Cut-off
Package Height8.6
Lens Shape TypeDomed
Supplier PackageT-1 3/4
Viewing OrientationTop View
Peak Wavelength (nm)930
Phototransistor TypePhototransistor
Standard Package NameT-1 3/4
Fabrication TechnologyNPN Transistor
Maximum Dark Current (nA)50
Maximum Light Current (uA)9000(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)150
Half Intensity Angle Degrees (°)30
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4
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