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QSD122A4R0
QSD122A4R0
Phototransistors QSD122A4R0
onsemi
QSD122A4R0
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Optoelectronics
Phototransistors
QSD122A4R0.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeModule
EU RoHSCompliant
Diameter6.1(Max)
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorBlack
PCB changed2
Part StatusObsolete
Package Height8.77
Lens Shape TypeDomed
Supplier PackageT-1 3/4
Viewing OrientationTop View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Standard Package NameT-1 3/4
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)7000(Typ)
Maximum Rise Time (ns)7000(Typ)
Maximum Dark Current (nA)100
Number of Channels per Chip1
Maximum Collector Current (mA)6
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)12
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor Module Silicon 880nm 2-Pin T-1 3/4 T/R
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