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BPW85C
BPW85C
Phototransistors BPW85C
Vishay
BPW85C
--
Optoelectronics
Phototransistors
BPW85C.pdf
Specification
Product AttributeAttribute Value
HTS8541491050
PPAPNo
TypeChip
EU RoHSCompliant
Diameter3.4
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorClear
PCB changed2
Part StatusActive
Package Height4.5
Lens Shape TypeDomed
Supplier PackageT-1
Viewing OrientationTop View
Peak Wavelength (nm)850
Phototransistor TypePhototransistor
Standard Package NameT-1
Fabrication TechnologyNPN Transistor
Maximum Dark Current (nA)200
Maximum Light Current (uA)8000
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)50
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor Chip Silicon 850nm 2-Pin T-1 Bulk
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