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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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TEST2600
TEST2600
Phototransistors TEST2600
Vishay
TEST2600
--
Optoelectronics
Phototransistors
TEST2600.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
Pin Count2
AutomotiveNo
PCB changed2
Part StatusActive
Package Width2.2
Cut-Off FilterVisible Cut-off
Package Height3.1
Package Length3.6
Lens Shape TypeDomed
Supplier PackageSide View Micro
Viewing OrientationSide View
Peak Wavelength (nm)920
Phototransistor TypePhototransistor
Standard Package NameSide View
Fabrication TechnologyNPN Transistor
Maximum Dark Current (nA)100
Maximum Light Current (uA)2500(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)60
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor IR Chip Silicon 920nm 2-Pin Side View Micro
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