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QSE114E3R0
QSE114E3R0
Phototransistors QSE114E3R0
onsemi
QSE114E3R0
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Optoelectronics
Phototransistors
QSE114E3R0.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorBlack Transparent
PCB changed2
Part StatusObsolete
Package Width2.67(Max)
Cut-Off FilterVisible Cut-off
Package Height5.8(Max)
Package Length4.7(Max)
Lens Shape TypeDomed
Supplier PackageSide Looker
Viewing OrientationSide View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)8000(Typ)
Maximum Rise Time (ns)8000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)1000(Min)
Number of Channels per Chip1
Maximum Collector Current (mA)5
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)25
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 880nm 2-Pin Side Looker T/R
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